| 发明名称 |
OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY |
| 摘要 |
Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition. |
| 申请公布号 |
US2017090287(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615281700 |
申请日期 |
2016.09.30 |
| 申请人 |
Rohm and Haas Electronic Materials Korea Ltd. |
发明人 |
Hong Chang-Young;Ryu Eui Hyun;Jang Min-Kyung;Kim Dong-Yong |
| 分类号 |
G03F7/11;C08F220/16;C07C271/12;C07D211/48;G03F7/004;G03F7/16;G03F7/40;G03F7/20;G03F7/32;C08F220/28;C09D133/14 |
主分类号 |
G03F7/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A composition suitable for use in forming a layer over photoresist layer, the composition comprising:
a first polymer comprising: first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition. |
| 地址 |
Cheonan KR |
