| 发明名称 |
MEMORY WITH READ CIRCUITRY AND METHOD OF OPERATING |
| 摘要 |
A non-volatile memory includes a first bit cell having a programmable resistive element coupled to a write bit line wherein the programmable resistive element is programmable to one of two resistive states, a resistive element coupled to the programmable resistive element at a circuit node, and a first transistor configured to operate in saturation during a read operation. The first transistor has a control electrode coupled to the circuit node and a first current electrode coupled to a read bit line. |
| 申请公布号 |
US2017092354(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201514869419 |
申请日期 |
2015.09.29 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
PELLEY PERRY H.;BAKER JR. FRANK K. |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory comprising:
a first bit cell having a programmable resistive element coupled to a write bit line wherein the programmable resistive element is programmable to one of two resistive states; a resistive element coupled to the programmable resistive element at a circuit node; and a first transistor configured to operate in saturation during a read operation and having a control electrode coupled to the circuit node and a first current electrode coupled to a read bit line. |
| 地址 |
Austin TX US |
