发明名称 PROCESS FOR DEPOSITING METAL ON A SUBSTRATE
摘要 A process for depositing a metal on a substrate involves the use of two reduction reactions in a bottom-up based tandem manner starting from a substrate surface and working upward. A first reduction reaction starts on the substrate surface at ambient temperature, and a second reduction reaction, which is initiated by the reaction heat of the first reduction reaction, occurs in a reactive ink solution film coated on top, which becomes solid after the reaction. Gas and other small molecules generated from the reduction reactions, and the solvent, can readily escape through the upper surface of the film before the solid metal layer is formed or during post-treatment, with no or few voids left in the metal film. Thus, the process can be used to form highly conductive films and features at ambient temperature on various substrates.
申请公布号 EP3024900(A4) 申请公布日期 2017.03.29
申请号 EP20140829173 申请日期 2014.07.16
申请人 National Research Council of Canada 发明人 ZHANG, Zhiyi;TAO, Ye;FUKUTANI, Hiroshi;XIAO, Gaozhi
分类号 C09D11/52;C09D11/037;C09D11/322;C09D11/38;C09D11/54;C23C16/06;C23C18/16;C23C18/18;C23C18/20;C23C18/31;C23C18/40;C23C18/44;H05K3/12;H05K3/18;H05K3/24 主分类号 C09D11/52
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