发明名称 THIN FILM TRANSISTOR, FABRICATION METHOD THEREOF, AND DISPLAY APPARATUS
摘要 Various embodiments provide a thin film transistor (TFT), a fabrication method thereof, and a display apparatus including the TFT. A carbon nanotube layer (102) is formed over a substrate (100). The carbon nanotube layer (102) includes a first plurality of carbon nanotubes. A plurality of gaps (12) are formed through the carbon nanotube layer (102) to provide a first patterned carbon nanotube layer (102A). Carbon nanotube structures (112) each including a second plurality of carbon nanotubes are formed in the plurality of gaps (12). The carbon nanotube structures (112) have a carrier mobility different from the first patterned carbon nanotube layer (102A), thereby forming an active layer for forming active structures of the thin-film transistor.
申请公布号 WO2017045137(A1) 申请公布日期 2017.03.23
申请号 WO2015CN89660 申请日期 2015.09.15
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 ZHANG, Shuai;CHAN, Yu Cheng
分类号 H01L21/336;G02F1/1362;H01L29/786 主分类号 H01L21/336
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