SEMICONDUCTOR DEVICE

摘要

According to one embodiment, in a semiconductor device, The first semiconductor region is provided between the first and the second electrode. The second semiconductor region is provided between the first semiconductor region and the second electrode. The first and second connection region are electrically connected to the second electrode, reaches the first semiconductor region. The first insulating film is provided between the first connection region and the second semiconductor region and between the first connection region and the first semiconductor region. The second insulating film is provided between the second connection region and the second semiconductor region and between the second connection region and the first semiconductor region. The third connection region is provided between the first connection region and the second connection region, the third connection region is electrically connected to the second electrode, reaches the first semiconductor region or reaches the second semiconductor region.

主权项

1. A semiconductor device comprising:
a first electrode; a second electrode; a first semiconductor region of first conductivity type provided between the first electrode and the second electrode; a second semiconductor region of second conductivity type provided between the first semiconductor region and the second electrode; a first connection region electrically connected to the second electrode, the first connection region reaching the first semiconductor region from the second electrode; a second connection region electrically connected to the second electrode, the second connection region reaching the first semiconductor region from the second electrode, and the first connection region and the second connection region being arranged in a second direction crossing a first direction from the second electrode toward the first electrode; a first insulating film provided between the first connection region and the second semiconductor region and between the first connection region and the first semiconductor region; a second insulating film provided between the second connection region and the second semiconductor region and between the second connection region and the first semiconductor region; and a third connection region extending through the second semiconductor region in the first direction and provided between the first connection region and the second connection region in the second direction, the third connection region being electrically connected to the second electrode, and being made of metal, and a first distance from the third connection region to the first electrode being smaller than a second distance from the second semiconductor region to the first electrode.