SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, a memory film and a conductive member. The stacked body includes a plurality of electrode layers arranged in a first direction. The semiconductor pillar extends in the stacked body in the first direction. The memory film provides between the stacked body and the semiconductor pillar. The conductive member includes a contact and an interconnect. The contact includes metal, the contact extending in the stacked body in the first direction. The interconnect extends in a second direction crossing the first direction, and the interconnect including metal.

主权项

1. A semiconductor memory device, comprising:
a substrate; a stacked body provided on the substrate, the stacked body including a plurality of electrode layers arranged in a first direction; a semiconductor pillar extending in the stacked body in the first direction; a memory film provided between the stacked body and the semiconductor pillar; and a conductive member including a contact and an interconnect, the contact including metal, the contact extending in the stacked body in the first direction, the interconnect provided between the substrate and the stacked body, the interconnect extending in a second direction crossing the first direction, the interconnect including metal, the interconnect being electrically connected to the contact.