发明名称 |
THIN-FILM LED COMPRISING A CURRENT-DISPERSING STRUCTURE |
摘要 |
A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9). |
申请公布号 |
EP1709694(B1) |
申请公布日期 |
2017.03.15 |
申请号 |
EP20050706695 |
申请日期 |
2005.01.25 |
申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
BAUR, Johannes;HAHN, Berthold;HÄRLE, Volker;OBERSCHMID, Raimund;WEIMAR, Andreas |
分类号 |
H01L33/14;H01L33/32;H01L33/38;H01L33/40 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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