Semiconductor device having recess filled with insulating material provided between source/drain impurity region and gate insulator

摘要

Electric-field concentration in the vicinity of a recess is suppressed. A gate insulating film is provided on a substrate that has a drain region and a first recess therein. The first recess is located between the gate insulating film and the drain region, and is filled with an insulating film. The insulating film has a second recess on its side close to the gate insulating film. An angle defined by an inner side face of the first recess and the surface of the substrate is rounded on a side of the drain region close to the gate insulating film.

主权项

1. A semiconductor device, comprising:
a substrate; a first transistor having a gate insulating film and a gate electrode, and having a drain and a source opposed to each other with the gate insulating film in between in a plan view; a first impurity region that is provided in the substrate and is to be one of the drain and the source; a first recess that is provided in the substrate and is located between the gate insulating film and the first impurity region; a first insulating film filled in the first recess; and a second recess provided in the first insulating film on a side close to the gate insulating film, wherein a first angle defined by an inner side face of the first recess and a surface of the substrate is rounded on a side of the first recess close to the gate insulating film.