SEMICONDUCTOR DEVICE

摘要

A semiconductor device including a first fin pattern and a second fin pattern which have respective short sides facing each other and are separated from each other, a first field insulating layer which is around the first fin pattern and the second fin pattern, a second field insulating layer and a third field insulating layer which are between the first fin pattern and the second fin pattern, a first gate which is formed on the first fin pattern to intersect the first fin pattern, a second gate which is formed on the second field insulating layer, and a third gate which is formed on the third field insulating layer, wherein upper surfaces of the second and third field insulating layers protrude further upward than an upper surface of the first field insulating layer, and a distance between the first gate and the second gate is equal to a distance between the second gate and the third gate.

主权项

1. A semiconductor device comprising:
a first fin pattern and a second fin pattern which have respective short sides facing each other and are separated from each other; a first field insulating layer around the first fin pattern and the second fin pattern; a second field insulating layer and a third field insulating layer between the first fin pattern and the second fin pattern; a first gate on the first fin pattern to intersect the first fin pattern; a second gate on the second field insulating layer; and a third gate on the third field insulating layer, wherein upper surfaces of the second and third field insulating layers protrude further upward than an upper surface of the first field insulating layer, and a distance between the first gate and the second gate is equal to a distance between the second gate and the third gate.