SOI WAFER MANUFACTURING PROCESS AND SOI WAFER

摘要

Provided is an SOI wafer manufacturing method that allows production of an SOI wafer having a high gettering ability and a small resistance variance in a thickness direction of an active layer, at high productivity. The SOI wafer manufacturing method includes a first step of implanting light element ions to a surface of at least one of a first substrate and a second substrate to form, on the at least one of the first substrate and the second substrate, a modified layer in which the light element ions are present in solid solution, a second step of forming an oxide film on a surface of at least one of the first substrate and the second substrate, a third step of bonding the first substrate and the second substrate according to a normal-temperature vacuum bonding method, and a fourth step of obtaining an active layer by thinning the first substrate.

主权项

1. An SOI wafer manufacturing process, comprising:
a first step of implanting light element ions to a surface of at least one of a first substrate made of silicon single crystal and a second substrate made of silicon single crystal to form, in the at least one of the first substrate and the second substrate, a modified layer in which the light element ions are present in solid solution; a second step of forming an oxide film on a surface of at least one of the first substrate and the second substrate; a third step of bonding the first substrate and the second substrate in a manner such that the modified layer and the oxide film are located between the first substrate and the second substrate; and a fourth step, performed after the third step, of thinning the first substrate to obtain an active layer, wherein, in the second step, the oxide film is deposited by accelerating and emitting ionized Si and oxygen to the at least one of the first substrate and the second substrate while heating the at least one of the first substrate and the second substrate, and in the third step, the first substrate and the second substrate are bonded together at a normal temperature by emitting an ion beam or a neutral atomic beam to surfaces to be bonded of the first substrate and the second substrate under vacuum to activate the surfaces and subsequently by contacting the surfaces to be bonded with each other under vacuum.