METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device includes the steps of: forming a semiconductor layer on a first main surface of a semiconductor substrate made of crystals having a wide band gap; forming lattice defects on a second main surface on a side opposite to the first main surface of the semiconductor substrate; and emitting a laser beam having a longer wavelength than an absorption edge wavelength which is a wavelength of a light having the lowest energy which the crystals absorb, to a lower surface of the semiconductor substrate after the step of forming the lattice defects; and forming an electrode on the second main surface of the semiconductor substrate after the step of emitting the laser beam.