发明名称 Application of fluorine doped tin (IV) oxide SnO2:F for making a heating layer on a photovoltaic panel, and the photovoltaic panel
摘要 The invention consists in application of fluorine doped tin (IV) oxide SnO 2 :F (FTO) for making a heating layer on a photovoltaic panel. The invention consists also in a photovoltaic panel characterized in that its front part (1) is covered with a conductive layer (2) of fluorine doped tin (IV) oxide SnO 2 :F, with the electrodes (3) deposited thereon. The conductive layer (2) becomes a heating layer when connected to the source of electric current. In preferred embodiment a transarent polymer film (4) is applied thereon, inseparably and permanently bound with the conductive layer (2) of fluorine doped tin (IV) oxide SnO 2 :F and the photovoltaic cell (5).
申请公布号 PL2629337(T3) 申请公布日期 2017.02.28
申请号 PL20050124600T 申请日期 2012.02.16
申请人 ML SYSTEM Spółka Akcyjna 发明人 BORATYŃSKI PAWEŁ;SKUPIEŃ KRZYSZTOF;STANEK EDYTA;CYCOŃ DAWID
分类号 H01L31/042 主分类号 H01L31/042
代理机构 代理人
主权项
地址