| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes an oxide semiconductor layer, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, a first barrier layer below the oxide semiconductor layer, and a second barrier layer above the oxide semiconductor layer, the second barrier layer covering a top surface and side surfaces of the oxide semiconductor layer and being in contact with the first barrier layer in a region around the oxide semiconductor layer. |
| 申请公布号 |
US2017054028(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
US201615230915 |
申请日期 |
2016.08.08 |
| 申请人 |
Japan Display Inc. |
发明人 |
SASAKI Toshinari;SUZUMURA Isao |
| 分类号 |
H01L29/786;H01L29/40;H01L21/4757;H01L21/465;H01L29/423;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
an oxide semiconductor layer; a gate electrode facing the oxide semiconductor layer; a gate insulating layer between the oxide semiconductor layer and the gate electrode; a first barrier layer below the oxide semiconductor layer; and a second barrier layer above the oxide semiconductor layer, the second barrier layer covering a top surface and side surfaces of the oxide semiconductor layer and being in contact with the first barrier layer in a region around the oxide semiconductor layer. |
| 地址 |
Tokyo JP |
