| 发明名称 |
GAS SUPPLY NOZZLE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM |
| 摘要 |
Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole. |
| 申请公布号 |
US2017051408(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
US201615211583 |
申请日期 |
2016.07.15 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
TAKAGI Kosuke;SASAJIMA Ryota;KOGURA Shintaro;AKAE Naonori;YAMAKOSHI Risa;FUJINO Toshiki;TERASAKI Masato;MINAMI Masayoshi |
| 分类号 |
C23C16/455;H01L21/02;C23C16/24 |
主分类号 |
C23C16/455 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A gas supply nozzle comprising:
a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced; a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas into the processing chamber is provided to a side surface of the substrate; and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole. |
| 地址 |
Tokyo JP |
