SENSING AND REFERENCE VOLTAGE SCHEME FOR RANDOM ACCESS MEMORY

摘要

A method uses a memory that includes a plurality of non-volatile memory (NVM) cells; a plurality of word lines; a plurality of bit lines; and an amplifier having an inverting input, a non-inverting input, and an output; and a capacitance coupled to the inverting input includes. A reference is coupled to the non-inverting input. The output of the amplifier is coupled to the inverting input of the amplifier while the non-inverting input receives the reference. The output is decoupled from the inverting input to store a voltage on the inverting input of the amplifier. A non-volatile (NV) element of a first NVM cell of the plurality of NVM cells is coupled to the non-inverting input. An output signal representative of the state of the NVM cell is provided.

主权项

1. A method of operating a memory, wherein the memory comprises a plurality of non-volatile memory (NVM) cells; a plurality of word lines; a plurality of bit lines; and an amplifier having an inverting input, a non-inverting input, and an output; and a capacitance coupled to the inverting input, the method comprising:
coupling a reference having a magnitude to the non-inverting input; coupling the output of the amplifier to the inverting input of the amplifier while the reference is coupled to the non-inverting input; decoupling the output from the inverting input whereby a voltage is stored on the inverting input of the amplifier; coupling a non-volatile (NV) element of a first NVM cell of the plurality of NVM cells to the non-inverting input; and providing an output signal representative of a logic state of the NVM cell.