| 摘要 |
A method of manufacturing an RC-IGBT provided with an IGBT and an FWD on the same substrate is provided. First, top surface device structures of an IGBT and an FWD are formed on the top surface of a semiconductor substrate. Then, with the side of an IGBT region on the top surface of the semiconductor substrate shielded by a first shielding mask, only an FWD region is irradiated with light ions. Next, with the side of the FWD region on the bottom surface of the semiconductor substrate shielded by a second shielding mask, only the IGBT region is irradiated with light ions. With this, a first lifetime control region 10-1 is formed on the collector side A2 in the IGBT region A1-A2 and a second lifetime control region 10-2 is formed on the anode side B1 of the FWD region B1-B2. |
