Read operations and circuits for memory devices having programmable elements, including programmable resistance elements

摘要

A memory devices and methods can use multiple sense operations to detect a state of memory elements in a marginal state. In some embodiments, an evaluation circuit can generates an output value for a memory element in response multiple sense results for the same memory element.

主权项

1. A memory device, comprising:
a sense circuit configured to generate a sense result by sensing a state of a memory element; a store circuit configured to store a plurality of sense results generated at different times by the sense circuit for a same memory element; and an evaluation circuit that generates an output value for the memory element in response to at least the plurality of sense results for the memory element stored in the store circuit.