发明名称 DATA SENSING IN CROSSPOINT MEMORY STRUCTURES
摘要 The present disclosure provides a data storage device that includes a memory cell array and sense circuitry to detect a data value stored to a memory cell of the memory cell array. The data storage device also includes a controller to bias the sense circuitry during a read phase of a write operation to increase the probability that the sense circuitry will detect an opposite value that is opposite from the value being written to the memory cell.
申请公布号 WO2017023245(A1) 申请公布日期 2017.02.09
申请号 WO2015US43107 申请日期 2015.07.31
申请人 HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP 发明人 LESARTRE, Gregg B.;FOLTIN, Martin;JEON, Yoocharn
分类号 G11C7/06;G11C8/06 主分类号 G11C7/06
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