| 发明名称 |
P-TYPE OXIDE SEMICONDUCTOR, COMPOSITION FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM |
| 摘要 |
A p-type oxide semiconductor, which contains: a metal oxide containing thallium (Tl), where the metal oxide has been hole doped. |
| 申请公布号 |
EP3087614(A4) |
申请公布日期 |
2017.02.08 |
| 申请号 |
EP20140875695 |
申请日期 |
2014.12.16 |
| 申请人 |
Ricoh Company, Ltd. |
发明人 |
ABE, Yukiko;UEDA, Naoyuki;NAKAMURA, Yuki;MATSUMOTO, Shinji;SONE, Yuji;SAOTOME, Ryoichi;ARAE, Sadanori |
| 分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L27/32;H01L29/66;H01L29/861 |
主分类号 |
H01L29/786 |
| 代理机构 |
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代理人 |
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| 主权项 |
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