发明名称 SEMICONDUCTOR DEVICE HAVING A MULTI-LEVEL INTERCONNECTION STRUCTURE
摘要 A semiconductor device includes a semiconductor substrate, and a multi-level interconnection structure that is provided on the semiconductor substrate and that has a plurality of interconnection layers stacked one on another. Each interconnection layer includes a real interconnection and a dummy interconnection covered with an insulative film. The interconnection layers include a first interconnection layer including a first real interconnection, a second interconnection layer stacked on the first interconnection layer and including an overlapping dummy interconnection that overlaps the first real interconnection in a stacking direction of the plurality of interconnection layers in a sectional view, and a third interconnection layer stacked on the second interconnection layer and including a second real interconnection that overlaps the overlapping dummy interconnection in the stacking direction of the plurality of interconnection layers in the sectional view.
申请公布号 US2017033041(A1) 申请公布日期 2017.02.02
申请号 US201514813781 申请日期 2015.07.30
申请人 ROHM CO., LTD. 发明人 MORITA Takeshi
分类号 H01L23/528;H01L23/522 主分类号 H01L23/528
代理机构 代理人
主权项 1. A semiconductor device, comprising: a semiconductor substrate; and a multi-level interconnection structure that is provided on the semiconductor substrate and that has a plurality of interconnection layers stacked one on another, each interconnection layer including a real interconnection and a dummy interconnection covered with an insulative film; wherein the plurality of interconnection layers includes a first interconnection layer including a first real interconnection, a second interconnection layer stacked on the first interconnection layer and including an overlapping dummy interconnection that overlaps the first real interconnection in a stacking direction of the plurality of interconnection layers in a sectional view, and a third interconnection layer stacked on the second interconnection layer and including a second real interconnection that overlaps the overlapping dummy interconnection in the stacking direction of the plurality of interconnection layers in the sectional view.
地址 Kyoto JP