发明名称 |
MOS CAPACITOR OPTICAL MODULATOR WITH TRANSPARENT CONDUCTIVE AND LOW-REFRACTIVE-INDEX GATE |
摘要 |
A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other. |
申请公布号 |
EP3123239(A1) |
申请公布日期 |
2017.02.01 |
申请号 |
EP20150719131 |
申请日期 |
2015.04.17 |
申请人 |
Huawei Technologies Co. Ltd. |
发明人 |
CHEN, Hongmin;XU, Qianfan;YANG, Li;SHEN, Xiao |
分类号 |
G02F1/025;G02B6/12 |
主分类号 |
G02F1/025 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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