| 发明名称 |
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
An electronic device may include a semiconductor memory. The semiconductor memory may include a variable resistance element including a ferromagnetic layer including a hydrogen group; an oxide spacer formed on sidewalls of the variable resistance element; and a nitride spacer formed on the oxide spacer. |
| 申请公布号 |
US2017025599(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615048119 |
申请日期 |
2016.02.19 |
| 申请人 |
SK hynix Inc. |
发明人 |
Kim Jeong-Myeong;Kim Yang-Kon;Lim Jong-Koo |
| 分类号 |
H01L43/08;G06F12/08;G11C11/16;H01L43/02;H01L43/10 |
主分类号 |
H01L43/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device including a semiconductor memory, the semiconductor memory comprising:
a variable resistance element including a ferromagnetic layer including a hydrogen group; an oxide spacer formed on sidewalls of the variable resistance element; and a nitride spacer formed on the oxide spacer. |
| 地址 |
Icheon-Si KR |
