SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device, including a semiconductor substrate, a semiconductor layer disposed on a surface of the semiconductor substrate, a first semiconductor region disposed in the semiconductor layer at a surface thereof, a source region and a second semiconductor region disposed in the first semiconductor region at a surface thereof, a source electrode contacting the source region and the second semiconductor region, a gate insulating film disposed on the surface of the semiconductor layer and covering a portion of the first semiconductor region between the source region and the semiconductor layer, a gate electrode disposed on a surface of the gate insulating film, a drain electrode disposed on another surface of the semiconductor substrate, and a third semiconductor region, which has an impurity concentration higher than that of the first semiconductor region, formed in the semiconductor layer at the surface thereof and being electrically connected to the source electrode.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type, having a first principal surface and a second principal surface; a semiconductor layer of the first conductivity type, disposed on the first principal surface of the semiconductor substrate, the semiconductor layer having an impurity concentration lower than that of the semiconductor substrate; a first semiconductor region of a second conductivity type, disposed in the semiconductor layer at a surface thereof; a source region of the first conductivity type, disposed in the first semiconductor region at a surface thereof; a second semiconductor region of the second conductivity type, disposed in the first semiconductor region at the surface thereof, the second semiconductor region having an impurity concentration higher than that of the first semiconductor region; a source electrode disposed to contact the source region and the second semiconductor region; a gate insulating film disposed on the surface of the semiconductor layer, and covering a portion of the first semiconductor region between the source region and the semiconductor layer adjacent to the first semiconductor region; a gate electrode disposed on a surface of the gate insulating film; a drain electrode disposed on the second principal surface of the semiconductor substrate; and a third semiconductor region of the second conductivity type, formed in the semiconductor layer at the surface thereof and being electrically connected to the source electrode, the third semiconductor region having an impurity concentration higher than that of the first semiconductor region.