| 发明名称 |
METHOD FOR CLEANING VIA OF INTERCONNECT STRUCTURE OF SEMICONDUCTOR DEVICE STRUCTURE |
| 摘要 |
A method for forming the semiconductor device structure is provided. The method includes forming a metal layer in a first dielectric layer over a substrate and forming an etch stop layer over the metal layer. The etch stop layer is made of metal-containing material. The method also includes forming a second dielectric layer over the etch stop layer and removing a portion of the second dielectric layer to expose the etch stop layer and to form a via by an etching process. The method further includes performing a plasma cleaning process on the via and the second dielectric layer, and the plasma cleaning process is performed by using a plasma including nitrogen gas (N2) and hydrogen gas (H2). |
| 申请公布号 |
US2017018458(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201514802734 |
申请日期 |
2015.07.17 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
CHENG Tai-Shin;CHANG Che-Cheng;CHEN Wei-Ting;SHIAO Wei-Yin |
| 分类号 |
H01L21/768;H01L21/02;H01L21/027;H01L21/311 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device structure, comprising:
forming a metal layer in a first dielectric layer over a substrate; forming an etch stop layer over the metal layer, wherein the etch stop layer is made of metal-containing material; forming a second dielectric layer over the etch stop layer removing a portion of the second dielectric layer to expose the etch stop layer and to form a via by an etching process; and performing a plasma cleaning process on the via and the second dielectric layer, wherein the plasma cleaning process is performed by using a plasma comprising nitrogen gas (N2) and hydrogen gas (H2). |
| 地址 |
Hsin-Chu TW |
