| 发明名称 | Structure for integration of an III-V compound semiconductor on SOI | ||
| 摘要 | A semiconductor-on-insulator (SOI) substrate is provided that includes a silicon or germanium handle substrate that is miscut from 2 degrees to 8 degrees towards the <111> crystallographic direction or the <100> crystallographic direction. The topmost semiconductor layer is removed from a portion of the SOI substrate, and then a trench having a high aspect ratio is formed within the insulator layer of the SOI substrate and along the <111> crystallographic direction or the <100> crystallographic direction. An III-V compound semiconductor pillar, which includes a lower portion that has a first defect density and an upper portion that has a second defect density that is less than the first defect density, is then formed in the trench. | ||
| 申请公布号 | US9548319(B2) | 申请公布日期 | 2017.01.17 |
| 申请号 | US201514643360 | 申请日期 | 2015.03.10 |
| 申请人 | International Business Machines Corporation | 发明人 | Jagannathan Hemanth;Reznicek Alexander |
| 分类号 | H01L21/02;H01L21/311;H01L21/84;H01L27/092;H01L29/06;H01L29/267;H01L27/12;H01L29/16;H01L29/04;H01L29/20;H01L21/762 | 主分类号 | H01L21/02 |
| 代理机构 | Scully, Scott, Murphy & Presser, P.C. | 代理人 | Scully, Scott, Murphy & Presser, P.C. ;Morris, Esq. Daniel P. |
| 主权项 | 1. A semiconductor structure comprising: a handle substrate of silicon or germanium that is miscut from 2 degrees to 8 degrees towards the <111> crystallographic direction or the <100> crystallographic direction; an III-V compound semiconductor pillar extending upward from one region of said handle substrate, wherein said III-V compound semiconductor pillar is in direct contact with a topmost surface of said handle substrate and is surrounded by dielectric material; and a top semiconductor material portion located over another region of said handle substrate, wherein said top semiconductor material portion is separated from said handle substrate by an insulator layer. | ||
| 地址 | Armonk NY US | ||