Junction field effect transistor based biosensor

摘要

In an embodiment of the invention, a biosensor comprises a semiconductor region having a doping polarity; a source region located at a first end of the semiconductor layer and a drain region located at a second end of the semiconductor layer; wherein the source region is in electrical communication with a source voltage; a current path from the source region, through the semiconductor layer, to the drain region; a sensing gate region in contact with a first surface of the semiconductor layer and having an opposite polarity as the semiconductor layer; a sensing surface in electrical communication with the sensing gate region; and a dual gate region in contact with a second surface of the semiconductor layer; wherein the dual gate region has a same polarity as the sensing gate region.

主权项

1. A biosensor comprising:
a semiconductor region having a doping polarity; a source region located at a first end of the semiconductor region and a drain region located at a second end of the semiconductor region, wherein the source region is in electrical communication with a source voltage; a current path from the source region, through the semiconductor region, to the drain region; a sensing gate region in contact with a first surface of the semiconductor region and having an opposite polarity as the semiconductor region; a sensing surface in electrical communication with the sensing gate region; a dual gate region that is in contact with a second surface of the semiconductor region located opposite to the first surface of the semiconductor region, wherein the dual gate region has a same polarity as the sensing gate region; a first oxide region that is in contact with a first side of the source region located opposite to the first end of the semiconductor region, wherein a portion of the first oxide region extends to partially contact a second side of the source region such that an interface area between the second side of the source region and a substrate is reduced; and a second oxide region that is in contact with a first side of the drain region located opposite to the second end of the semiconductor region, wherein a portion of the second oxide region extends to partially contact a second side of the drain region such that an interface area between the second side of the drain region and the substrate is reduced.