Semiconductor light-emitting device

摘要

A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).

主权项

1. A semiconductor light emitting device comprising:
an elongated substrate having an obverse surface, a reverse surface opposite to the obverse surface, a surface-mounting side surface extending in a longitudinal direction of the substrate, a first end surface and a second end surface spaced apart from the first end surface in the longitudinal direction; a first semiconductor light emitting element, a second semiconductor light emitting element and a third semiconductor light emitting element each mounted on the obverse surface of the substrate, the second semiconductor light emitting element being disposed closer to the first end surface of the substrate than is each of the first semiconductor light emitting element and the third semiconductor light emitting element, the third semiconductor light emitting element being disposed closer to the second end surface of the substrate than is each of the first semiconductor light emitting element and the second semiconductor light emitting element; and an electrode electrically connected to the first semiconductor light emitting element; wherein the substrate is formed with a through-hole extending from the obverse surface to the reverse surface, the through-hole being disposed between the second semiconductor light emitting element and the third semiconductor light emitting element as viewed in a normal direction to the obverse surface of the substrate, the through-hole being spaced apart from the side surface of the substrate, and wherein the electrode comprises a plated layer that extends from the obverse surface, through the through-hole, and to the reverse surface of the substrate.