发明名称 Gas barrier film and method for manufacturing gas barrier film
摘要 A method for providing a gas barrier film with ample gas barrier properties even in a high temperature, which is maintained when the film is bent. The gas barrier film also has excellent resistance to cracking. A gas barrier film, and a method for manufacturing the same is also disclosed.
申请公布号 US9540526(B2) 申请公布日期 2017.01.10
申请号 US201314436252 申请日期 2013.10.15
申请人 KONICA MINOLTA, INC. 发明人 Nishio Shoji
分类号 C09D7/12;C23C16/40;C23C16/54;H01L51/52;C23C14/34;C23C16/455;C23C16/50 主分类号 C09D7/12
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP
主权项 1. A gas barrier film comprising a gas barrier layer on at least one surface of a substrate, the gas barrier layer containing silicon, oxygen, and carbon, wherein distribution curves of silicon, oxygen, and carbon obtained through element distribution measurement for the gas barrier layer in a depth direction using X-ray photoelectron spectroscopy satisfy all of following conditions (i) to (iv): (i) atomic percentages of silicon, oxygen, and carbon have a following relationship in an area covering 90% or more of a distance from a surface of the gas barrier layer across a thickness; (atomic percentage of carbon)<(atomic percentage of silicon)<(atomic percentage of oxygen); (ii) the carbon distribution curve has at least two local extremum points; (iii) an absolute value of a difference between a maximum value and a minimum value of the atomic percentage of carbon on the carbon distribution curve is 5 at % or more; and (iv) on the oxygen distribution curve, a value of a local maximum point of the oxygen distribution curve closest to the surface, adjacent to the substrate, of the gas barrier layer is largest of values of local maximum points of the oxygen distribution curve of the gas barrier layer; and wherein the atomic percentage of oxygen at the local maximum point of the oxygen distribution curve closest to the surface, adjacent to the substrate, of the gas barrier layer is 1.05 times or more the atomic percentage of oxygen at a local maximum point of the oxygen distribution curve closest to the surface, remote from the substrate, of the gas barrier layer.
地址 Tokyo JP