Wafer-level light emitting diode package and method of fabricating the same

摘要

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

主权项

1. A light emitting diode (LED) package, comprising:
first and second light emitting cells, each comprising a first semiconductor layer, an active layer and a second semiconductor layer, wherein the second semiconductor layer and the active layer of each light emitting cell provides a contact region exposing the first semiconductor layer of each of the light emitting cells; a first protective insulation layer covering a sidewall of each of the light emitting cells; a connector located arranged on a first side of the light emitting cells and electrically connecting two adjacent light emitting cells to each other; a first bump arranged on the first side of the light emitting cells and electrically connected to the first semiconductor layer via the contact region of the first light emitting cell; a second bump arranged on the first side of the light emitting cells and electrically connected to the second semiconductor layer of the second light emitting cell; a first contact layer arranged on the exposed first semiconductor layer; a second contact layer arranged on the second semiconductor layer; and a second protective insulation layer arranged between the first bump and the first contact layer, wherein the first semiconductor layer comprises a roughened surface, andwherein each light emitting cell comprises an inclined sidewall.