Dark current reduction for back side illuminated image sensor

摘要

A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.

主权项

1. An apparatus comprising:
a semiconductor image sensor device having a non-scribe-line region and a scribe-line region, the scribe-line region being a region that separates one semiconductor die from an adjacent semiconductor die, the semiconductor image sensor device including:
a first substrate portion disposed in the non-scribe-line region, wherein the first substrate portion contains a doped radiation-sensing region; anda second substrate portion disposed in the scribe-line region, wherein the second substrate portion has the same material composition as the first substrate portion.