发明名称 |
Polycrystalline diamond compacts, related products, and methods of manufacture |
摘要 |
Embodiments relate to polycrystalline diamond compacts (“PDCs”) and methods of manufacturing such PDCs in which an at least partially leached polycrystalline diamond (“PCD”) table is infiltrated with a low viscosity cobalt-based alloy infiltrant. |
申请公布号 |
US9540885(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201514857627 |
申请日期 |
2015.09.17 |
申请人 |
US SYNTHETIC CORPORATION |
发明人 |
Mukhopadhyay Debkumar;Gonzalez Jair J. |
分类号 |
B22F3/14;E21B10/567;B24D3/06;B24D99/00;B24D18/00;B22F7/06;C22C26/00;B22F5/00 |
主分类号 |
B22F3/14 |
代理机构 |
Dorsey & Whitney LLP |
代理人 |
Dorsey & Whitney LLP |
主权项 |
1. A method of fabricating a polycrystalline diamond compact, comprising:
forming a polycrystalline diamond table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature process, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including the metal-solvent catalyst disposed therein; at least partially leaching the polycrystalline diamond table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached polycrystalline diamond table; subjecting the at least partially leached polycrystalline diamond table and a substrate to a second high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with an alloy infiltrant comprising a cobalt-boron-silicon alloy infiltrant; and wherein the at least partially infiltrated polycrystalline diamond table includes a first region adjacent to the substrate that includes the cobalt-boron-silicon alloy infiltrant disposed in at least a portion of the interstitial regions thereof, and a second region extending inwardly from an exterior surface that is substantially free of the cobalt-boron-silicon alloy infiltrant. |
地址 |
Orem UT US |