发明名称 |
Signal distribution in integrated circuit using optical through silicon via |
摘要 |
An optical through silicon via is formed in a silicon substrate of an integrated circuit. A photo detector is formed within the integrated circuit and is optically coupled to a first side of the optical through silicon via. A light generating source optically coupled to a second side of the optical through silicon via is provided. The photo detector is configured to receive a light, generated by the light generating source, propagating through the optical through silicon via. The light, generated by the light generating source, is controlled by a signal generated by a signal generating source. |
申请公布号 |
US9543463(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201414524569 |
申请日期 |
2014.10.27 |
申请人 |
International Business Machines Corporation |
发明人 |
Leobandung Effendi;Warnock James D.;Wendel Dieter |
分类号 |
H01L27/15;H01L31/12;H01L31/153;H01L31/167;H01L31/0232;H01L31/105;H01L31/107;H01L31/11;H01L31/18;H01S5/022 |
主分类号 |
H01L27/15 |
代理机构 |
Ryan, Mason & Lewis, LLP |
代理人 |
Percello Louis J.;Ryan, Mason & Lewis, LLP |
主权项 |
1. An apparatus comprising:
a signal generating source; a silicon substrate of an integrated circuit comprising at least one optical through silicon via, wherein the optical through silicon via comprises a nitride layer as an optical transmission medium, and wherein the optical through silicon via is formed by etching the nitride layer to recess a top surface of the nitride layer to below a top surface of the silicon substrate thereby forming a trench, and forming a silicon epilayer over a top surface of a remainder of the nitride layer and within the trench; a photo detector formed within the integrated circuit and optically coupled to a first side of the at least one optical through silicon via; a set of electrical elements coupled to the photo detector; and a light generating source optically coupled to a second side of the optical through silicon via; wherein the photo detector is operative to receive a light, generated by the light generating source, propagating through the optical through silicon via, and wherein the light, generated by the light generating source, is an optical signal controlled by a signal generated by the signal generating source; wherein the photo detector is further operative to convert the optical signal to an electrical signal, and wherein the electrical signal is distributed to the set of electrical elements. |
地址 |
Armonk NY US |