LATERAL BICMOS REPLACEMENT METAL GATE

摘要

A method of forming a semiconductor structure includes depositing a high-k dielectric layer within a first recess located between sidewall spacers of a first CMOS device and within a second recess located between sidewall spacers of a second CMOS device. A dummy titanium nitride layer is deposited on the high-k dielectric layer. Next, the high-k dielectric layer and the dummy titanium nitride layer are removed from the second recess in the second CMOS device. A silicon cap layer is deposited within the first recess and the second recess, the silicon cap layer is located above the high-k dielectric layer and dummy titanium nitride layer in the first CMOS device. Subsequently, dopants are implanted into the silicon cap layer located in the second recess of the second CMOS device.

主权项

1. A semiconductor structure, comprising:
a CMOS device in a first region of a semiconductor substrate having a metal gate formed between first sidewall spacers and above a high-k dielectric layer and a dummy titanium nitride layer, the metal gate being located above a channel region connecting a source-drain region within the semiconductor substrate; a BJT device in a second region of the semiconductor substrate having a base region formed between second sidewall spacers and an emitter-collector region adjacent to the base region; a cap layer located above the semiconductor substrate; an ILD layer located above the cap layer and between the CMOS and BJT devices; and a plurality of contacts formed in the ILD layer.