发明名称 INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT
摘要 An integrated circuit for an imaging device including an array of photo-sensitive areas is disclosed. In one aspect the integrated circuit includes a first multi-layer structure and a second multi-layer structure arranged over a first and a second photo-sensitive area, respectively. The second multi-layer structures each have a bottom and a top reflective structure and a spacer layer arranged therebetween. The spacer layer has a thickness such that the multi-layer structure selectively transmits a narrow range of wavelengths of electro-magnetic radiation. The bottom and top reflective structures include a stack of alternating layers of a first and a second material. Thickness and/or material of the alternating layers of the first multi-layer structure differ from thickness and/or material of the alternating layers of the second multi-layer structure.
申请公布号 US2017005132(A1) 申请公布日期 2017.01.05
申请号 US201615191412 申请日期 2016.06.23
申请人 IMEC VZW 发明人 Vereecke Bart;Sabuncuoglu Tezcan Deniz;Soussan Philippe
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. An integrated circuit for an imaging device, comprising: an array of photo-sensitive areas forming pixels; a first multi-layer structure arranged over a first photo-sensitive area of the array; and a second multi-layer structure arranged over a second photo-sensitive area of the array, wherein the first and the second multi-layer structures each have a bottom reflective structure, a top reflective structure and a spacer layer arranged between the bottom and top reflective structures, the spacer layer having a thickness which is adapted so that the first and second multi-layer structures, respectively, selectively transmit a narrow range of wavelengths of electro-magnetic radiation, wherein at least one of the bottom and top reflective structures comprise a stack of alternating layers of a first and a second material for forming a reflective structure, and wherein thickness and/or material of the alternating layers of the at least one of the bottom and top reflective structures of the first multi-layer structure differ from thickness and/or material of the alternating layers of the at least one of the bottom and top reflective structures of the second multi-layer structure.
地址 Leuven BE