| 发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CIRCUIT INCLUDING THE SAME |
| 摘要 |
A semiconductor device is disclosed. The semiconductor device includes a substrate and a plurality of devices on the substrate, wherein a first device of the devices includes a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer brought together with the first nitride semiconductor layer to form a first heterojunction interface, between the substrate and the first nitride semiconductor layer, a third nitride semiconductor layer brought together with the second nitride semiconductor layer to form a second heterojunction interface, between the substrate and the second nitride semiconductor layer, and a first contact electrically connected to the first and second heterojunction interfaces. |
| 申请公布号 |
US2017005086(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201415100028 |
申请日期 |
2014.01.17 |
| 申请人 |
LG INNOTEK CO., LTD. |
发明人 |
TWYNAM John |
| 分类号 |
H01L27/06;H01L29/872;H01L29/778;H01L49/02;H01L29/20;H01L29/205 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; and a plurality of devices on the substrate, wherein a first device of the devices comprises: a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer brought together with the first nitride semiconductor layer to form a first heterojunction interface, between the substrate and the first nitride semiconductor layer; a third nitride semiconductor layer brought together with the second nitride semiconductor layer to form a second heterojunction interface, between the substrate and the second nitride semiconductor layer; and a first contact configured to be electrically connected to the first and second heterojunction interfaces. |
| 地址 |
Seoul KR |
