| 主权项 |
1. An optoelectronic device comprising:
a doped semiconductor substrate of a first conductivity type; semiconductor pads or a semiconductor layer on a surface of the substrate doped with a second conductivity type opposite to the first type; and semiconductor elements, each semiconductor element being in contact with a pad or with the layer, wherein the substrate is made of a first semiconductor material selected from the group comprising silicon, germanium, a silicon-germanium alloy, silicon carbide, a III-V compound, such as GaN, GaAs, GaP, or GaSb, or ZnO, and a combination of these compounds, wherein the semiconductor pads or the semiconductor layer are made of a material selected from the group comprising aluminum nitride, boron nitride, silicon carbide, magnesium nitride, magnesium gallium nitride, or a combination thereof and of their nitrided compounds, and wherein each semiconductor element is at least partially covered with a semiconductor structure capable of emitting or of capturing light; and wherein each semiconductor element is a microwire, a nanowire, a conical or tapered element with a polygonal base. |
