THIN FILM AND FORMING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film which is formed on a p-type semiconductor region and which can produce a high passivation effect; and provide a forming method of the thin film.SOLUTION: A thin film forming method comprises: a step of storing inside a chamber, a semiconductor substrate having a principal surface of a p-type semiconductor region; a step of exciting plasma of a hydrogen-containing process gas inside the chamber; a step of exposing the principal surface to the plasma of the process gas to cause a hydrogen radical to form a bond with a dangling bond of the semiconductor substrate; a step of exciting plasma of a material gas inside the chamber by hollow cathode discharge using AC power of a frequency of not less than 40 kHz and not more than 550 kHz; and a step of exposing the principal surface to the plasma containing the material gas to form a thin film which is made of a silicon nitride film and has a refraction index of 2.25 and over in contact with the principal surface.SELECTED DRAWING: Figure 6