MICROMACHINED ULTRASONIC TRANSDUCER DEVICES WITH METAL-SEMICONDUCTOR CONTACT FOR REDUCED CAPACITIVE CROSS-TALK

摘要

Embodiments reduce capacitive cross-talk between micromachined ultrasonic transducer (MUT) arrays through grounding of the substrate over which the arrays are fabricated. In embodiments, a metal-semiconductor contact is formed to a semiconductor device layer of a substrate and coupled to a ground plane common to a first electrode of the transducer elements to suppress capacitive coupling of signal lines connected to a second electrode of the transducer elements.