| 发明名称 |
MOS CAPACITORS FLOW TYPE DEVICES AND METHODS OF FORMING THE SAME |
| 摘要 |
A capacitor structure is described. The capacitor structure includes a substrate; a source/drain region formed in the substrate to form an active area, the active area having an active area width; and at least two gates formed above the substrate. The at least two gates having a gate width. The gate width is configured to be less than the active area width. And, the at least two gates are formed such that the source/drain region is between the two gates to form at least one channel between the two gates. |
| 申请公布号 |
US2016293778(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201615085788 |
申请日期 |
2016.03.30 |
| 申请人 |
TDK Corporation |
发明人 |
Bao Jim;Gahlsdorf Rien |
| 分类号 |
H01L29/94;G05F3/24;H03H19/00;H01L27/08;H01L29/66;G05F3/20;H01L27/12 |
主分类号 |
H01L29/94 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A capacitor structure comprising:
a substrate; a source/drain region formed in said substrate to form an active area, said active area having an active area width; and at least two gates formed above said substrate, said at least two gates having a gate width, said gate width configured to be less than said active area width, said at least two gates formed such that said source/drain region is between said two gates to form at least one channel between said two gates. |
| 地址 |
Tokyo JP |
