| 摘要 |
A transistor for controlling turning electricity on/off by having one or more bending deformations of graphene comprises: a source electrode; a drain electrode; one or more graphenes connected to the source electrode, and having a plane different from that of the drain electrode; a selectively etched insulating material layer provided in a lower part of the one or more graphenes; one or more piezo materials provided in the lower part of the one or more graphenes and a position where the insulating material layer is etched; and a barrier adjusting circuit provided in the lower part of the one or more piezo materials, and intersected with a circuit of the one or more graphenes. The transistor for controlling turning electricity on/off by having one or more bending deformations of graphene further comprises: controlling turning electricity on/off by since the one or more piezo materials provided in the lower part of the one or more graphenes has one or more bending deformations by voltage of the barrier adjusting circuit intersected with the circuit intersected with the one or more graphenes; and controlling turning electricity on/off by having controlling the height of a Fermi level of the one or more graphenes between the one or more graphens and a drain electrode while comprising the above. |
