发明名称 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor film which can obtain a high photocurrent value and inhibit film peeling.SOLUTION: A semiconductor film includes an aggregate of semiconductor quantum dots containing metal atoms and at least one ligand which is coordinated to the semiconductor quantum dots and represented as a general formula (I). In the formula (I), A represents a hydrogen atom or a substituent of atom number 10 or less where a terminal is other than NHor SH.
申请公布号 JP5995661(B2) 申请公布日期 2016.09.21
申请号 JP20120241232 申请日期 2012.10.31
申请人 富士フイルム株式会社 发明人 小野 雅司;菊池 信;田中 淳;鈴木 真之;金光 義彦
分类号 H01L51/30;C07C59/06;C07C59/08;C07C59/10;C07C59/255;C07C59/285;H01L29/786;H01L31/0352;H01L31/08;H01L31/10;H01L33/26;H01L51/05 主分类号 H01L51/30
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