发明名称 |
半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor film which can obtain a high photocurrent value and inhibit film peeling.SOLUTION: A semiconductor film includes an aggregate of semiconductor quantum dots containing metal atoms and at least one ligand which is coordinated to the semiconductor quantum dots and represented as a general formula (I). In the formula (I), A represents a hydrogen atom or a substituent of atom number 10 or less where a terminal is other than NHor SH. |
申请公布号 |
JP5995661(B2) |
申请公布日期 |
2016.09.21 |
申请号 |
JP20120241232 |
申请日期 |
2012.10.31 |
申请人 |
富士フイルム株式会社 |
发明人 |
小野 雅司;菊池 信;田中 淳;鈴木 真之;金光 義彦 |
分类号 |
H01L51/30;C07C59/06;C07C59/08;C07C59/10;C07C59/255;C07C59/285;H01L29/786;H01L31/0352;H01L31/08;H01L31/10;H01L33/26;H01L51/05 |
主分类号 |
H01L51/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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