| 摘要 |
PROBLEM TO BE SOLVED: To successfully divide a wafer in which a bump is provided thereon in the TSV process.SOLUTION: A method for processing a wafer in which devices are formed on a surface of a semiconductor substrate and Via electrodes are embedded in the semiconductor substrate corresponding to each of devices, comprises the steps of: removing a chamfered part at a face surface side of the wafer from a wafer outer periphery; providing a carrier plate on the face surface of the wafer; detecting a depth of a Via electrode from a rear surface of the wafer; grinding the rear surface of the wafer in such depth as not to expose the Via electrode from the rear surface of the wafer; protruding the Via electrode from the rear surface of the wafer by etching the semiconductor substrate; covering the rear surface of the wafer with an insulating film; exposing the Via electrode from the insulating film; providing bumps on an exposed part from the insulating film of the Via electrode; forming division grooves in the wafer; and delivering the wafer to a dicing tape from the carrier plate. |
