| 摘要 |
PROBLEM TO BE SOLVED: To improve electrical characteristics of a second N-type semiconductor layer having a donor concentration higher than that of a first N-type semiconductor layer in an NPN-type GaN-based semiconductor device.SOLUTION: A first N-type semiconductor layer, a P-type semiconductor layer and a second N-type semiconductor layer are sequentially stacked in a semiconductor device. The first N-type semiconductor layer consists of GaN and contains Si as a donor. The P-type semiconductor layer primarily consists of GaN, and contains Mg as an acceptor. The second N-type semiconductor layer primarily consists of GaN and contains Si as a donor and having a concentration higher than that of the first N-type semiconductor layer. In the P-type semiconductor layer, a concentration of Mg at a boundary face adjacent to the second N-type semiconductor layer, is lower than a concentration of Si in the second N-type semiconductor layer. |
