| 摘要 |
A method for manufacturing a semiconductor device includes: forming a metal layer on a semiconductor layer; forming a plated layer having a pattern corresponding to a pattern of a gate bus line which couples each gate finger of a plurality of FETs on the metal layer, the pattern corresponding to the pattern of the gate bus line having a deficient part; forming a mask layer which covers the metal layer exposed in the deficient part; and patterning the metal layer by using the plated layer and the mask layer as a mask. |
