METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT

摘要

A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.

主权项

1. A semiconductor light-emitting element comprising:
a semiconductor stacked layer body; an insulating layer disposed on the semiconductor stacked layer body; a light-transmissive electrode disposed on the insulating layer, wherein at least one opening extends through the light-transmissive electrode; at least one light-reflecting layer, a portion of which is disposed on the insulating layer in the at least one opening of the light-transmissive electrode, and portions of which are disposed on portions of an upper surface of the light-transmissive electrode located at sides of the at least one opening.