| 摘要 |
A semiconductor radiation detector device includes a semiconductor substrate. On one surface of the substrate are a MIG layer (241) of semiconductor of second conductivity type, a barrier layer (251) of semiconductor of first conductivity type, and pixel dopings of semiconductor of the second conductivity type. The pixel dopings are adapted to be coupled to at least one pixel voltage in order to create a source and a drain of a pixel-specific transistor. The device further includes a first conductivity type first contact, so that the pixel voltage is a potential difference between one of the pixel dopings and the first conductivity type first contact. The location of a main gate (983) corresponds at least partly to the location of a channel between the source and the drain. The device includes at least one extra gate (981, 982) horizontally displaced from the main gate (983). |
