| 发明名称 |
NMOS AND PMOS STRAINED DEVICES WITHOUT RELAXED SUBSTRATES |
| 摘要 |
Techniques and methods related to strained NMOS and PMOS devices without relaxed substrates, systems incorporating such semiconductor devices, and methods therefor. |
| 申请公布号 |
US2016240616(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201315024348 |
申请日期 |
2013.12.16 |
| 申请人 |
CEA Stephen M.;KOTLYAR Roza;KENNEL Harold W.;MURTHY Anand S.;GLASS Glenn A.;KUHN Kelin J.;GHANI Tahir |
发明人 |
CEA Stephen M.;KOTLYAR Roza;KENNEL Harold W.;MURTHY Anand S.;GLASS Glenn A.;KUHN Kelin J.;GHANI Tahir |
| 分类号 |
H01L29/10;H01L21/8238;H01L29/165;H01L27/092;H01L29/04;H01L29/161 |
主分类号 |
H01L29/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
|
| 地址 |
Hillsboro OR US |
