| 摘要 |
An optoelectronic device comprises: a base substrate (10); a dielectric structure (40), formed on the base substrate and having a high depth-width proportion; a great-mismatch heterogeneous semiconductor material in the dielectric structure having a high depth-width proportion; and electrodes (60, 70) covering a font surface and a back surface. The great-mismatch heterogeneous semiconductor material of the optoelectronic device at least comprises a strain-free buffering layer (52), a core layer (53) and a coating layer (54) that are all located in a trench of the dielectric structure, and the semiconductor material does not protrude over the top surface of the dielectric structure. In addition, the device structure also comprises an electrode contact layer (55) located in the dielectric trench or on the trench, and comprises electrodes on a front surface and a back surface. The mismatch and dislocation between the mismatch material and the base substrate can be completely captured by the dielectric structure, the semiconductor material of the optoelectronic device grows in the dielectric structure, and the crystal quality is high. |
