| 摘要 |
Disclosed is a method of preparing low temperature polysilicon thin film, the method comprising the steps of growing an amorphous silicon thin film layer: first growing a silicon oxide layer on the amorphous silicon thin film layer; then preparing a number of concave surfaces on the silicon oxide layer, the concave surfaces causing refraction of laser beams vertically irradiated onto the silicon oxide layer; finally irradiating with excimer laser beams from the silicon oxide layer onto the amorphous silicon thin film layer, causing the amorphous silicon thin film layer to crystallize and form low temperature polysilicon thin film. Also disclosed are a low temperature polysilicon thin film prepared by a method described above and a transistor comprising the same. When preparing low temperature polysilicon thin film with an excimer laser annealing process in the invention, the start point and direction of recrystallization is controllable, thus obtaining larger polysilicon crystal grains. |
