发明名称 ウェーハの加工方法
摘要 A wafer has a device area where a plurality of devices are formed, and a peripheral marginal area surrounding the device area. These devices are formed on the front side of the wafer so as to be partitioned by a plurality of division lines. A modified layer is formed by applying a laser beam along the division lines with the focal point of the laser beam set inside the wafer, thereby forming a modified layer as a division start point inside the wafer along each division line. The wafer is transported to a position where the next step is to be performed. In the modified layer forming step, the modified layer is not formed in the peripheral marginal area of the wafer to thereby form a reinforcing portion in the peripheral marginal area. Accordingly, breakage of the wafer from the modified layer in the transporting step can be prevented.
申请公布号 JP5964580(B2) 申请公布日期 2016.08.03
申请号 JP20110283060 申请日期 2011.12.26
申请人 株式会社ディスコ 发明人 関家 一馬
分类号 H01L21/301;B23K26/40;B28D5/00 主分类号 H01L21/301
代理机构 代理人
主权项
地址